Preliminary
SIM100D06AV1
Electrical Characteristic Values (IGBT / DIODE)
@ Tj = 25℃ (unless otherwise specified)
Parameters
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
RRM
I
RM
t
rr
Q
rr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse leakage current
Reverse Recovery Time
Reverse Recovery Charge
Min
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
600
ㅡ
ㅡ
ㅡ
Typ
6100
390
190
70
25
260
60
ㅡ
ㅡ
125
4.7
Max
ㅡ
Unit
Test conditions
V
CE
= 25V , V
GE
=
0V
ㅡ
ㅡ
ㅡ
ㅡ
pF
f = 1 MHz
Inductive Switching (125℃)
V
CC
= 300V
ns
I
C
= 100A
,
V
GE
=±15V
R
G
= 3.3
Ω
V
㎂
ns
µC
V
R
= 600V
I
F
= 100A, V
R
= 300V
di / dt = 2000A /
㎲
ㅡ
ㅡ
ㅡ
250
ㅡ
ㅡ
Thermal Characteristics
Symbol
R
ΘJC
R
ΘJC
R
ΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.05
Max
0.44
0.77
-
Unit
℃/W
※ Data and
specifications
subject to change without notice.
-2-
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
