Preliminary
SIM150D12SV3
V
CES
= 1200V
Ic = 150A
V
CE(ON)
typ. = 2.7V
@ Ic = 150A
“HALF-BRIDGE” IGBT Module
Features
▪
Update NPT Technology design
▪
10µs Short circuit capability
▪
Low turn-off loss
▪
Short tail current for over 18KHz
▪
Positive V
CE
(on)
temperature coefficient
Applications
▪
SMPS & Electrolysis Machine
▪
High Power Inverters
▪
High Frequency inverter-type
Welding machines
▪
Servo Controls
▪
UPS, EPS or Robotics
PKG
V3
62
mm
Absolute Maximum Ratings
@ Tj=25℃ (per leg)
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
T
SC
V
iso
T
j
T
stg
Weight
Mounting
Torque
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Power Terminal Screw : M5
Terminal connection Screw : M5
T
C
= 80℃
T
C
= 80℃
T
C
= 80℃
V
GE
= 0V,
Condition
I
C
= 1.0m
A
Ratings
1200
±
20
150
300
150
300
10
Unit
V
V
A
A
A
A
µs
V
℃
℃
g
Nm
Nm
AC 1 minute
2500
-40 ~ 150
-40 ~ 125
360
3.5
3.5
Electrical Characteristics
@ Tj = 25℃ (unless otherwise specified)
Symbol
V
(BR)CES
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
FM
Parameters
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min
1200
-
Typ
-
2.7
5.0
Max
-
3.1
6.0
1.0
± 200
Unit
Test conditions
V
GE
=
0V, I
C
= 1.0m
A
V
I
C
= 150A,
V
GE
=
15V
V
CE
= V
GE,
I
C
= 500
µA
V
CE
= 1200V
V
GE
=
±
20V
-
-
-
-
-
2.1
mA
nA
V
V
GE
= 0V,
V
CE
= 0V,
I
C
= 150A
2.4
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