Preliminary
SIM200D06AV2
V
CES
= 600V
Ic= 200A
V
CE(ON)
typ. = 1.6V
@Ic= 200A
“HALF-BRIDGE” IGBT
Feature
▪
Smart field stopper +Trench
design technology
▪
Low V
CE
(sat)
▪
Low Turn-off losses
▪
Short tail current for over 20KHz
Applications
▪
Motor controls
▪
VVVF inverters
▪
Inverter-type welding MC over 18KHZ
▪
SMPS, Electrolysis
▪
UPS/EPS, Robotics
PKG: V2=48mm
Absolute Maximum Ratings
@ Tj=25℃ (Per Leg)
Symbol
V
CES
V
GE
I
C
I
CP
I
F
I
FM
t
p
V
iso
Weight
Tj
Tstg
Md
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, V
GE
= 15V, V
CC
= 360V
Isolation Voltage test
Weight of Module
Junction Temperature
Storage Temperature
Mounting torque with screw : M5
Terminal connection torque : M5
T
C
=
25℃
Condition
Ratings
600
±
20
Unit
V
V
A
A
A
A
㎲
V
g
℃
℃
N.m
N.m
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 150℃
(25℃)
AC @ 1 minute
200 (290)
450
200 (290)
400
6 (8)
2500
190
-40 ~ 150
-40 ~ 125
2.0
2.0
Static Characteristics
@ Tj = 25℃ (unless otherwise specified)
Parameters
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
F
R
GINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Forward voltage drop
Integrated gate resistor
ㅡ
ㅡ
ㅡ
Min
Typ
1.60
5.8
ㅡ
ㅡ
1.6
2
Max
1.95
Unit
V
Test conditions
I
C
= 200A, V
GE
= 15V
V
CE
= V
GE,
I
C
= 4㎃
6.5
5.0
400
1.9
ㅡ
㎃
㎁
V
Ω
V
GE
= 0V, V
CE
= 600V
V
CE
= 0V, V
GE
=
20V
I
F
= 200A
-1-
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
