Preliminary
SIM75D12SV1
V
CES
= 1200V
Ic = 75A
V
CE(ON)
typ. = 2.6V
@ Ic = 75A
“HALF-BRIDGE” IGBT MODULE
Features
▪
Smarted NPT Technology Design
▪
10
µs
Short circuit capability
▪
Low turn-off losses
▪
Short tail current for over 18KHZ
▪
Positive V
CE
(on)
temperature coefficient
Applications
▪
AC & DC Motor controls
▪
VVVF inverters
▪
Optimized for high frequency inverter
Type Welding machines
▪
High frequency SMPS
▪
UPS, Robotics
Package : V1
Absolute Maximum Ratings
@ Tc = 25℃ (per leg)
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
T
SC
V
iso
T
j
T
stg
Weight
Mounting
Torque
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Power Terminal Screw : M5
Terminal connection Screw : M5
T
C
= 80℃
T
C
= 80℃
T
C
= 80℃
V
GE
= 0V,
Condition
I
C
= 500
µA
Ratings
1200
± 20
75
150
75
150
10
Unit
V
V
A
A
A
A
µs
V
℃
℃
g
Nm
Nm
AC 1 minute
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Electrical Characteristics
@ Tj = 25℃ (unless otherwise specified)
Symbol
V
(BR)CES
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
FM
Parameters
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min
1200
-
-
-
-
-
Typ
-
2.6
5.0
-
-
2.1
Max
-
2.8
6.0
500
± 100
Unit
Test conditions
V
GE
=
0V, I
C
= 500
µA
V
I
C
= 75A,
V
GE
=
15V
V
CE
= V
GE,
I
C
= 500
µA
V
CE
= 1200V
V
GE
=
±
20V
µA
nA
V
V
GE
= 0V,
V
CE
= 0V,
I
C
= 75A
2.4
-1-
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
