STN1A60/80
Fig 1. Gate Characteristics
10
1
Fig 2. On-State Voltage
10
1
V
GM
(6V)
25
℃
10
0
P
G(AV)
(0.1W)
I
GM
(0.5A)
On-State Current [A]
Gate Voltage [V]
P
GM
(1W)
T
J
= 125 C
10
0
o
25
℃
I
I
I
+
GT1
_
GT1
_
GT3
I
+
GT3
T
J
= 25 C
o
V
GD
(0.2V)
10
-1
10
0
10
1
10
2
10
3
10
-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
θ
= 180
o
θ
= 150
o
θ
= 120
o
θ
= 90
θ
= 60
θ
= 30
0.6
o
o
o
Fig 4. On State Current vs.
Allowable Case Temperature
Allowable Case Temperature [
o
C]
130
120
110
100
90
80
70
60
50
40
0.0
1.5
Power Dissipation [W]
1.2
π
θ
360°
θ
2
π
0.9
θ
: Conduction Angle
π
θ
360°
θ
2
π
0.3
θ
: Conduction Angle
θ
θ
θ
θ
θ
θ
0.6
0.8
1.0
= 30
o
= 60
o
= 90
o
= 120
o
= 150
o
= 180
1.2
o
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.2
0.4
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
12
10
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
V
8
60Hz
V
GT
(25 C)
V
GT
(t C)
o
o
V
V
1
6
V
+
GT1
_
GT1
+
GT3
_
GT3
4
50Hz
2
0.1
-50
0
0
10
10
1
10
2
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
