SemiWell
Semiconductor
Bi-Directional Triode Thyristor
Symbol
STR4A80
Features
◆
Repetitive Peak Off-State Voltage : 800V
◆
R.M.S On-State Current ( I
T(RMS)
= 4 A )
◆
High Commutation dv/dt
○
2.T2
▼
▲
○
3.Gate
1.T1
○
General Description
This device is new surface mounted package line up suitable
for space limited application such as low power AC switching
applications, such as fan speed, small light controllers and
home appliance equipment.
TO-126
3
2
1
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Sine wave, 50 to 60 Hz, Gate open
T
C
= 95 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
T
C
= 95 °C, Pulse width
≤
1.0us
Over any 20ms period
tp = 20us, T
J
=125°C
tp = 20us, T
J
=125°C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Ratings
800
4.0
30/33
4.5
3
0.3
1.0
7.0
- 40 ~ 125
- 40 ~ 150
0.26
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
g
Mar, 2008. Rev. 5
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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