1N4245, 1N4246, 1N4247,
1N4248, 1N4249
General Purpose Silicon Rectifiers
POWER DISCRETES
Description
Quick reference data
V
R
= 200V - 1000V
I
F
= 1.0A
t
rr
= 2µS
V = 1.2V
F
Features
1 Amp 55°C/no heat sink
Monolithic non-cavity construction
Fused metal oxide hermetic seal
Superior thermal shock resistance
Low thermal impedance
Low reverse leakage
PIV to 1000 volts
These products can be supplied as JAN, JANTX or
JANTXV per MIL-S-19500/286
Electrical Specifications
Electrical specifications: All temperatures are local ambient , 25°C unless otherwise specified.
Device
Types
Reverse
Voltage
Forw ard
Reverse
Instantaneous Repetitive
Current Current (Max)
Forw ard
Surge
(1)
Voltage
Current
Free Air
55°C
I
R
UAdc
V
F
@ I
F
=
1.0Adc
I
FRM
1 Cycle
Surge
Current
tp = 8.3ms
I
FSM
Reverse
Recovery
Time (2)
Trr
µS
Typical
Thermal
Impedance
(3)
θ
J-
L
°C/Watt
d=0
7
7
7
7
7
d = .375
38
38
38
38
38
V
RWM
V
RRM
V
1N4245
1N4246
1N4247
1N4248
1N4249
200
400
600
800
1000
V
200
400
600
800
1000
A
1.0
1.0
1.0
1.0
1.0
25°C
1.0
1.0
1.0
1.0
1.0
100°C
25
25
25
25
25
V dc
1.2
1.2
1.2
1.2
1.2
A (pk)
10
10
10
10
10
A (pk)
30
30
30
30
30
Max. Typ.
2
2
2
2
2
1
1
1
1
1
Notes:
(1) The 1.0 amp rating @ 55°C requires no heat sinking, special mounting, or forced air across the body of the
device.
(2) Recovery conditions: 0.5 Amp forward current to -1.0 Amp reverse current. Recovery time measured when
rectifier recovers to -.25 Amp.
Storage temperature: -65°C to +175°C.
Revision: May 30, 2007
1
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