SC1102/SC1102A
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device
reliability.
Parameter
VCC, BSTL to GND
PGND to GND
PHASE to GND
(1)
BSTH to PHASE
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering) 10 Sec.
Note: (1) -1.5V to 20V for 25ns repetitive every cycle.
Symbol
V
IN
Maximum
-1.0 to 14
± 0.5
-0.5 to 18
14
Units
V
V
V
V
°C/W
°C/W
°C
°C
°C
°C
θ
J C
θ
J A
T
A
T
J
T
STG
T
LEAD
45
115
0 to 70
125
-65 to +150
300
Electrical Characteristics
Unless specified: V
CC
= 4.75V to 12.6V; GND = PGND = 0V; FB = V
O
; V
BSTL
= 12V; V
BSTH-PHASE
= 12V; T
J
= 25
o
C
Parameter
Pow er Supply
Supply Voltage
Supply Current
Line Regulation
Error Amplifier
Gain (AOL)
Input Bias
Oscillator
Oscillator Frequency
Conditions
Min
Typ
Max
Units
VC C
EN = VC C
VO = 2.5V
4.2
6
0.5
12.6
10
V
mA
%
35
5
8
dB
µA
SC1102
SC1102A
170
425
90
200
500
95
230
575
kHz
Oscillator Max Duty Cycle
MOSFET Drivers
DH Source/Sink
DL Source/Sink
BSTH - DH = 4.5V,
DH- PHASE = 2V
BSTL - DL = 4.5V.
DL - PGND. = 2V
2
%
1
1
A
A
2006 Semtech Corp.
www.semtech.com