High Speed Synchronous Power
MOS.ET Driver
POWER MANAGEMENT
Description
The SC1205H is a cost effective,
High Drive Voltage,
Dual MOS.ET Driver designed for switching High and Low
side Power MOS.ETs. Each driver is capable of Ultra-
fast rise/fall times as well as a 20ns max propagation
delay from input transition to the gate of the power .ETs.
An internal Overlap Protection circuit prevents shoot-
through from Vin to GND in the main and synchronous
MOS.ETs. The Adaptive Overlap Protection circuit en-
sures the Bottom .ET does not turn on until the Top .ET
source has reached a voltage low enough to prevent
cross-conduction.
Higher gate voltage drive capability of 8V (top and
bottom) optimally reduces Rds_on of power MOS.ETs
without excessive driver and .ET switching losses. The
high current drive capability (5A peak) allows fast switch-
ing, thus reducing switching losses at high (up to 1MHz)
frequencies without causing thermal stress on the driver.
The high voltage CMOS process allows operation from 5-
18 Volts at top MOS.ET drain, thus making SC1205H
suitable for battery powered applications. Connecting
Enable pin (EN) to logic low shuts down both drives and
reduces operating current to less than 10µA.
An under-voltage-lock-out and overtemperature shut-
down feature is included to guarantee proper and safe
operation. The SC1205H is offered in a standard SO-8
package.
SC1205H
PRELIMINARY
.eatures
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Higher efficiency (>90%)
K
.ast rise and fall times (15ns typical with 3000pf
load)
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Higher
gate drive voltage (8V) for optimum
MOS.ET RDS_ON at minimum switching loss
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Ultra-low (<20ns) propagation delay (BG going low)
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5 Amp peak drive current
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Adaptive non-overlapping gate drives provide
shoot-through protection
K
.loating top drive switches up to 18V
K
Under-voltage lock-out
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Over-temperature shutdown
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Less than 10
µ
A supply current when EN is low
K
Low cost
Applications
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K
K
K
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Intel Pentium
TM
power supplies
AMD Athlon
TM
and K8
TM
power supplies
High efficiency portable and notebook computers
Battery powered applications
High frequency (to 1.0 MHz) operation allows use
of small inductors and low cost caps in place of
electrolytics
Typical Application Circuit
Vin 5-12V
2200uf
10u,CER
10nf
10
2.5m
+8V
70N03
1
2
3
4
5
6
7
Rf
8
VID4
VID3
VID2
VID1
VID0
ERROUT
FB
RREF
VCC
BGOUT
OC+
OUT1
OUT2
OC-
UVLO
GND
16
15
14
13
12
11
BST
TG
+8V
VS
EN
DRN
70N03
BG
CO
SC1205H
GND
1.5V,40A
70N03
10
9
BST
TG
VS
EN
DRN
70N03
Rref
+8V
SC2422B
CO
Ri
SC1205H
BG
GND
Revision 2, June 2002
1
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SEMTECH [ SEMTECH CORPORATION ]
