HIGH SPEED SYNCHRONOUS POWER
MOSFET DRIVER
PRELIMINARY - December 7, 1999
SC1205
ABSOLUTE MAXIMUM RATINGS
Parameter
V
CC
Supply Voltage
BST to PGND
BST to DRN
DRN to PGND
OVP_S to PGND
Input pin
Continuous Power Dissipation
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering) 10 sec
NOTE:
(1) Specification refers to application circuit in Figure 1.
Symbol
V
MAX5V
VMAX
BST-PGND
VMAX
BST-DRN
VMAX
DRN-PGN
VMAX
OVP_S-PGND
CO
Pd
θϑΧ
θ
JA
T
J
T
STG
T
LEAD
Conditions
Maximum
7
30
7
25
10
-0.3 to 7.3
0.66
2.56
40
150
0 to +125
-65 to +150
300
Units
V
V
V
V
V
V
W
°C/W
°C/W
°C
°C
°C
Tamb = 25°C, T
J
= 125°C
Tcase = 25°C, T
J
= 125°C
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS)
Unless specified: -0 <
θ
J
< 125°C; V
CC
= 5V; 4V < V
BST
< 26V
PARAMETER
POWER SUPPLY
Supply Voltage
Quiescent Current, operating
Quiescent Current
UNDER-VOLTAGE LOCKOUT
Start Threshold
Hysteresis
Logic Active Threshold
V
START
Vhys
UVLO
V
ACT
4.2
4.4
0.05
1.5
4.6
V
V
V
V
CC
Iq_op
Iq_stby
V
CC
V
CC
= 5V, CO = 0V
EN = 0V
4.15
5
1
10
6.0
V
ma
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2
© 1999 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
SEMTECH [ SEMTECH CORPORATION ]
