SC338(A)
POWER MANAGEMENT
Electrical Characteristics (Cont.)
Unless specified: T
A
= 25°C, V
IN
= V
EN
= 5V
±
5%, V
PWR(1)
= 1.5V
±
5%, 0A
≤
I
OUT
≤
3A.
Values in
bold
apply over full operating ambient temperature range.
Parameter
EN (Cont.)
Enable Input Bias Current
Symbol
Test Conditions
Min
Typ
Max
Units
I
EN
V
E N
= 0V
V
IN
= V
EN
= 5V or 12V
-1
0
+1
µA
ADJ
Adjust Input Bias Current
Reference Voltage
I
ADJ
V
AD J
SC338A only: 0°C
≤
T
A
≤
+85°C
DRV
Output Current
I
DRV
Sourcing, startup
(until V
TH(PGD)
is reached)
Sourcing, after startup
Sinking
Output Voltage
V
DRV
Full On, I
DRV
= 0mA, V
IN
= 12V
Full On, I
DRV
= 0mA, V
IN
= 5V
Under Voltage Protection
Trip Threshold
PGD
Power Good Threshold
(3)
(2)
V
ADJ
= 0.5V
-100
-2.5%
-1.5%
0
0.500
+100
+2.5%
+1.5%
nA
V
10
0.7
400
6.6
4.70
2.0
750
6.9
4.85
µA
mA
µA
V
V
TH(UV)
Measured at ADJ pin
40
50
60
%V
ADJ
V
TH(PGD)
V
PGD
I
PGD
Measured at ADJ pin
V
ADJ
= 0.4V, I
PGD
= -1mA
V
ADJ
= 0.5V, 0V
≤
V
PGD
≤
V
IN
-15
-12
-9
0.4
%V
ADJ
V
µA
Output Logic Low Voltage
Power Good Leakage
Current
Soft Start
Output Rise Time
10% V
OUT
to 90% V
OUT
,
V
OUT
= 1.05V
-1
0
+1
t
r
C
DRV-GND
= not placed
C
DRV-GND
= 10nF
150
850
µs
Notes:
(1) V
PWR
= input voltage to pass device drains (or sources depending upon orientation of FETs).
(2) If V
TH(UV)
is exceeded for longer than 50µs
(nom.) the protection circuitry will shut down that output.
(3) During startup only, V
TH(PGD)
is -6% (typ.), then switches to -12% (typ.).
2004 Semtech Corp.
3
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SEMTECH [ SEMTECH CORPORATION ]
