SC415
Electrical Characteristics (continued)
25°C
Parameter
PGDx Leakage
-40° to 85°C
Max
Min
Max
1
Conditions
Min
Typ
Units
μA
Fault Protection
VDD1 Under-Voltage Lockout
VOUTx Under-Voltage Fault
VOUTx Under-Voltage Fault Delay
(2)
VOUTx Over-Voltage Fault
VOUTx Over-Voltage Fault Delay
(2)
Thermal Shutdown
(2)
Latching,
>10°C Hysteresis
VDD1 Falling Edge
VOUTx Falling Edge
4.0
-30
8
20
5
160
+17
+23
3.7
-35
4.35
-25
V
%
clks
%
μsec
°C
Inputs/Outputs
EN1, EN2 Input Low Voltage
ENx Input -
Forced Continuous Mode Operation
ENx Input High Voltage
VOUTx Disabled
ENx = Open
VOUTx Enabled,
Power Save Enabled
R Pull Up to VDDx
ENx Input Resistance
R Pull Down to RTN
FBx Input Low Voltage
FBx Input High Voltage
Power Good Output Low Voltage
R
PGDx
= 10kΩ to VDDx
1
0.3
VDDx -0.7
0.4
MΩ
V
V
V
1.5
2.0
1.2
V
V
3.1
V
MΩ
Gate Drivers
Shoot-Thru Protection Delay
(2)
DLx Pull-Down Resistance
DLx Sink Current
(2)
DLx Pull-Up Resistance
DLx Source Current
(2)
DHx Pull-Down Resistance
DHx or DLx Rising
DL Low
V
DLx
= 2.5V
DLx High
V
DLx
= 2.5V
DHx Low,
BSTx - LXx = 5V
DHx High,
BSTx - LXx = 5V
V
DHx
= 2.5V
30
0.8
3.1
2
1.3
2
4
4
1.6
nsec
Ω
A
Ω
A
Ω
DHx Pull-Up Resistance
(3)
DHx Sink/Source Current
(2)
2
1.3
4
Ω
A
Notes:
1) RTON = 1Meg.
2) Guaranteed by design.
3) Semtech’s SmartDrive™ FET drive first pulls DH high with a pull-up resistance of 10Ω (typical) until LX = 1.5V (typical). At this point, an additional pull-up device is
activated, reducing the resistance to 2Ω (typical). This negates the need for an external gate or boost resistor.
6
SEMTECH [ SEMTECH CORPORATION ]
