1N4448WS
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
d
T
j
T
stg
Value
100
80
150
300
0.5
200
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 5 mA
at I
F
= 10 mA
at I
F
= 100 mA
at I
F
= 150 mA
Reverse Leakage Current
at V
R
= 80 V
at V
R
= 20 V
at V
R
= 75 V, T
J
= 150
O
C
at V
R
= 25 V, T
J
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
Capacitance
at V
R
= 0.5 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 0.1 X I
R
, R
L
= 100
Ω
Symbol
Min.
0.62
-
-
-
-
-
-
-
80
-
-
Max.
0.72
0.855
1
1.25
100
25
50
30
-
4
4
Unit
V
F
V
I
R
nA
nA
µA
µA
V
pF
ns
V
(BR)R
C
tot
t
rr
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
