1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIERS
Features
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
•
Case: Molded plastic, DO-41
Dimensions in mm
Maximum Ratings and Electrical Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length at T
L
= 90
O
C
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method) at T
L
= 70
O
C
Maximum Instantaneous Forward Voltage at 1 A
Maximum Instantaneous Forward Voltage at 3.1 A
Maximum Instantaneous Reverse Current at
Rated DC Reverse Voltage
Typical Thermal Resistance
Typical Junction Capacitance
Storage and Operating Junction Temperature Range
T
A
= 25
O
C
T
A
= 100
O
C
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θJA
R
θJL
C
J
T
j
,T
stg
0.45
0.75
1N5817
20
14
20
1N5818
30
21
30
1
25
0.55
0.875
1
10
50
15
110
- 65 to + 125
O
1N5819
40
28
40
Units
V
V
V
A
A
0.6
0.9
V
mA
C/W
pF
O
C
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/11/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
