1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Max. 0.5
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Average Forward Current
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
O
T
J
T
stg
Value
10
30
125
- 55 to + 125
Unit
V
mA
O
C
C
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
Forward Current
at V
F
= 1 V
Reverse Current
at V
R
= 6 V
Capacitance
at V
R
= 1 V, f = 1 MHz
Rectifier Efficiency
at V
in
= 2 Vrms, f = 40 MHz, R
L
= 5 KΩ, C
L
= 20 pF
ESD Capability
1)
at C = 200 pF, both forward and reverse direction 1 pulse.
1)
Symbol
I
F
I
R
C
η
-
Min.
4.5
-
-
70
100
Max.
-
70
1.5
-
-
Unit
mA
µA
pF
%
V
Failure criterion: I
R
≥
140 µA at V
R
= 6 V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/06/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
