1SS184
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
1
3
2
Applications
• Ultra high speed switching application
Marking Code:
A4
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
tot
T
j
T
s
Value
85
80
100
300
2
150
150
- 55 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 30 V
at V
R
= 80 V
Total Capacitance
at V
R
= 0 , f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA
Symbol
V
F
I
R
C
T
t
rr
Max.
1.2
0.1
0.5
3
4
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
