1SS321
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
3
Features
• Low forward voltage
• Low reverse current
1
2
Marking Code: "ZC"
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Non-Repetitive Peak Forward Surge Current ( t = 10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
d
T
j
T
stg
Value
12
10
50
150
1
150
125
- 55 to + 125
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 50 mA
Reverse Current
at V
R
= 10 V
Reverse Breakdown Voltage
at I
R
= 10 µA
Total Capacitance
at V
R
= 0 , f = 1 MHz
Symbol
V
F
I
R
V
(BR)R
C
T
Min.
-
-
12
-
Max.
1
500
-
4.5
Unit
V
nA
V
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
