1SS352
SILICON EPITAXIAL PLANAR DIODE
Features
• Low forward voltage
• Fast Reverse Recovery Time
• Small Total Capacitance
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
W2
Application
• Ultra high speed switching
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
tot
T
j
T
stg
Value
85
80
100
200
1
200
125
- 55 to + 125
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 30 V
at V
R
= 80 V
Total Capacitance
at f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA
Symbol
V
F
Max.
1.2
Unit
V
I
R
0.1
0.5
3
4
µA
C
T
t
rr
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
