BAV101~BAV103
SILICON EPITAXIAL PLANAR DIODES
High Voltage General Purpose Diodes
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
BAV101
BAV102
BAV103
BAV101
BAV102
BAV103
Symbol
V
RRM
Value
120
200
250
100
150
200
250
625
3
1
400
300
175
- 65 to + 175
Unit
V
Reverse Voltage
V
R
I
F
I
FRM
V
mA
mA
A
mW
K/W
O
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
at t = 100 µs
at t = 1 s
I
FSM
P
tot
R
θJA
T
j
T
stg
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
Reverse Current
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
at V
R
= 100 V, T
j
= 150
O
C
at V
R
= 150 V, T
j
= 150
O
C
at V
R
= 200 V, T
j
= 150
O
C
Diode Capacitance
at f = 1 MHz, V
R
= 0
Reverse Recovery Time
at I
F
= I
R
= 30 mA, I
rr
= 3 mA, R
L
= 100
Ω
BAV101
BAV102
BAV103
BAV101
BAV102
BAV103
Symbol
V
F
Max.
1
1.25
100
100
100
100
100
100
5
50
Unit
V
I
R
nA
nA
nA
µA
µA
µA
pF
ns
C
d
t
rr
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/11/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
