BC307…BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
BC307
50
45
5
100
500
150
BC308
30
25
Unit
V
V
V
mA
mW
O
C
C
- 55 to + 150
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 2 mA
Current Gain Group
A
B
C
Symbol
h
FE
h
FE
h
FE
-I
CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(on)
f
T
C
cb
Min.
120
180
380
-
-
45
25
5
-
-
0.55
100
-
Max.
220
460
800
15
15
-
-
-
0.3
0.6
0.7
-
6
Unit
-
-
-
nA
V
V
V
V
MHz
pF
Collector Base Cutoff Current
at -V
CB
= 50 V
at -V
CB
= 30 V
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
at -I
C
= 100 mA, -I
B
= 5 mA
Base Emitter On Voltage
at -V
CE
= 5 V, -I
C
= 2 mA
Current Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
BC307
BC308
BC307
BC308
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
