BC368
NPN Silicon Epitaxial Planar Transistor
Applications
• General purpose switching and amplification
• Power applications such as audio output stages
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
S
Value
32
20
5
1
2
625
150
- 55 to + 150
Unit
V
V
V
A
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 10 V, I
C
= 5 mA
at V
CE
= 1 V, I
C
= 500 mA
at V
CE
= 1 V, I
C
= 1 A
Collector Base Cutoff Current
at V
CB
= 25 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 100 mA
Base Emitter On Voltage
at V
CE
= 1 V, I
C
= 1 A
Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 20 MHz
Symbol
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(on)
f
T
Min.
50
85
60
-
-
32
20
5
-
-
40
Max.
-
375
-
100
100
-
-
-
0.5
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
