BC517
NPN Silicon Darlington Transistor
Collector
Base
Emitter
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics (T
a
= 25
O
C)
Parameter
DC Current Gain
at V
CE
= 2 V, I
C
= 20 mA
Collector Saturation Voltage
at I
C
= 100 mA, I
B
= 0.1 mA
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 10 mA
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Cutoff Current
at V
CE
= 30 V
Collector Cutoff Current
at V
CB
= 30 V
Emitter Cutoff Current
at V
EB
= 10 V
Current-Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Symbol
h
FE
V
CEsat
V
BE(on)
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CES
I
CBO
I
EBO
f
T
Min.
30,000
-
-
40
30
10
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
Max.
-
1
1.4
-
-
-
500
100
100
-
Unit
-
V
V
V
V
V
nA
nA
nA
MHz
Symbol
V
CBO
V
CES
V
EBO
I
C
P
tot
T
j
T
S
Value
40
30
10
500
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :15/06/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
