BC817 / BC818
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier application,
These transistors are subdivided into three groups
–16, -25, -40 according to their current gain.
As complementary types, the PNP transistors
BC807 and BC808 are recommended.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature Range
BC817
BC818
BC817
BC818
SOT-23 Plastic Package
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
J
T
s
Value
50
30
45
25
5
500
200
500
150
- 55 to + 150
Unit
V
V
V
mA
mW
K/W
O
C
C
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
Current Gain Group
-16
-25
-40
Symbol
h
FE
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
CEsat
V
BE(on)
f
T
C
CBO
Min.
100
160
250
40
-
-
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
-
5
Max.
250
400
600
-
100
100
0.7
1.2
-
-
Unit
-
-
-
-
nA
nA
V
V
MHz
pF
at V
CE
= 1 V, I
C
= 500 mA
Collector Base Cutoff Current
at V
CB
= 20 V
Emitter-Base Cutoff Current
at V
EB
= 5 V
Collector Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Voltage
at I
C
= 500 mA, V
CE
= 1 V
Gain -Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2005
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
