BCW30
PNP Silicon Epitaxial Planar Transistor
general purpose switching and amplification
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
S
Value
32
32
5
100
200
200
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 2 mA
Collector Cutoff Current
at -V
CB
= 30 V
Emitter Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
Base Emitter Voltage
at -V
CE
= 5 V, -I
C
= 2 mA
Transition Frequency
at -V
CE
= 5 V, I
E
= 10 mA, f = 100 MHz
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
Symbol
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE
f
T
C
CBO
Min.
215
-
-
32
32
5
-
0.6
100
-
Typ.
-
-
-
-
-
-
-
-
-
4.5
Max.
500
100
100
-
-
-
0.3
0.75
-
-
Unit
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/08/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
