BCW61
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 10 µA
BCW61B
BCW61C
BCW61D
at -V
CE
= 5 V, -I
C
= 2 mA
BCW61B
BCW61C
BCW61D
at -V
CE
= 1 V, -I
C
= 50 mA
BCW61B
BCW61C
BCW61D
Collector Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.25 mA
Collector Saturation Voltage
at -I
C
= 50 mA, -I
B
= 1.25 mA
Base Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.25 mA
Base Saturation Voltage
at -I
C
= 50 mA, -I
B
= 1.25 mA
Base-Emitter Voltage
at -I
C
= 2 mA, -V
CE
= 5 V
Collector Base Cutoff Current
at -V
CB
= 32 V
at -V
CB
= 32 V,T
j
= 150
O
C
Emitter-Base Cutoff Current
at -V
EB
= 4 V
Gain -Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
Emitter-Base Capacitance
at -V
EB
= 0.5 V, f = 1 MHz
Noise figure
at -I
C
= 200 µA, -V
CE
= 5 V, R
S
= 2 KΩ, f = 1 KHz,
Δf=200Hz
Thermal Resistance, Junction to Ambient
1)
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-V
CEsat
-V
CEsat
-V
BEsat
-V
BEsat
-V
BE(on)
-I
CBO
-I
CBO
-I
EBO
f
T
C
CBO
C
EBO
NF
R
θJA
Min.
30
40
100
180
250
380
80
100
110
0.06
0.12
0.6
0.68
0.6
-
-
-
100
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.5
11
2
-
Max.
-
-
-
310
460
630
-
-
-
0.25
0.55
0.85
1.05
0.75
20
20
20
-
-
-
6
500
1)
Unit
-
-
-
-
-
-
-
-
-
V
V
V
V
V
nA
µA
nA
MHz
pF
pF
dB
K/W
Transistor mounted on an FR4 printed-circuit board.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/12/2005
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
