BFS20
NPN Silicon Epitaxial Planar Transistor
High frequency transistor for IF and VHF applications
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
30
20
4
25
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 10 V, I
C
= 7 mA
Collector Cutoff Current
at V
CB
= 20 V
Emitter Cutoff Current
at V
EB
= 4 V
Base Emitter Voltage
at V
CE
= 10 V, I
C
= 7 mA
Transition Frequency
at V
CE
= 10 V, I
C
= 5 mA, f = 100 MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
Symbol
h
FE
I
CBO
I
EBO
V
BE
f
T
C
OB
Min.
40
-
-
-
275
-
Typ.
-
-
-
-
450
1
Max.
140
100
100
0.9
-
Unit
-
nA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/11/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
