DB3, DB4, DC34
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse
current. These diacs are intended for use in thyristor phase
control, circuits for lamp-dimming, universal-motor speed
controls, and heat controls.
Max. 0.5
Min. 27.5
Max. 1.9
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation (T
a
= 65
O
C)
Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)
Operating Junction and Storage Temperature Range
Symbol
P
tot
I
TRM
T
j
,T
stg
Value
150
2
- 40 to + 125
Unit
mW
A
O
C
Characteristics at T
a
= 25
O
C
Parameter
DB3
Breakover Voltage
Breakover Currents
Breakover Voltage Symmetry
Dynamic Breakover Voltage
ΔI
=
[I
BR
to I
F
= 10 mA]
DC34
DB4
I
(BR)1
and I
(BR)2
[V
(BR)1
]-[V
(BR)2
]
|
ΔV
± |
V
(BR)1
and V
(BR)2
Symbol
Min.
28
30
35
-
-
5
Max.
36
38
45
200
3.8
-
µA
V
V
V
Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/11/2008