MMBT5087
PNP Silicon Epitaxial Planar Transistor
for general purpose application
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
S
Value
50
50
3
100
200
200
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 100 µA
at -V
CE
= 5 V, -I
C
= 1 mA
at -V
CE
= 5 V, -I
C
= 10 mA
Collector Cutoff Current
at -V
CB
= 35 V
Emitter Cutoff Current
at -V
EB
= 3 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
Base Emitter On Voltage
at -V
CE
= 5 V, -I
C
= 1 mA
Transition Frequency
at -V
CE
= 5 V, I
E
= 0.5 mA, f = 100 MHz
Collector Base Capacitance
at -V
CE
= 5 V, I
E
= 0 , f = 100 KHz
Symbol
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(on)
f
T
C
cb
Min.
250
250
250
-
-
50
50
3
-
-
40
-
Max.
800
-
-
50
50
-
-
-
0.3
0.85
-
4
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
