MPSA63 / 64
PNP Silicon Epitaxial Planar Transistor
Darlington Transistor
for high gain amplification
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CES
-V
EBO
-I
C
P
tot
T
j
T
S
Value
30
30
10
500
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 10 mA
at -V
CE
= 5 V, -I
C
= 100 mA
Collector Cutoff Current
at -V
CB
= 30 V
Emitter Cutoff Current
at -V
EB
= 10 V
Collector Emitter Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 100 µA
Base Emitter On Voltage
at -V
CE
= 5 V, -I
C
= 100 mA
Transition Frequency
at -V
CE
= 5 V, I
E
= 10 mA
MPSA63
MPSA64
MPSA63
MPSA64
Symbol
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CES
-V
CE(sat)
V
BE(on)
f
T
Min.
5000
10000
10000
20000
-
-
30
-
-
125
Max.
-
-
-
-
100
100
-
1.5
2
-
Unit
-
-
-
-
nA
nA
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/08/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
