RB500V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low I
R
• High reliability
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
Applications
• Low current rectification
1
S9
Top View
Marking Code: "S9"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Power Dissipation
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
P
tot
V
R
I
O
I
FSM
T
j
T
s
Value
45
200
40
0.1
1
125
- 40 to + 125
Unit
V
mW
V
A
A
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 100 µA
Forward Voltage
at I
F
= 10 mA
Reverse Current
at V
R
= 10 V
Capacitance Between Terminals
at V
R
= 10 V, f = 1 MHz
Symbol
V
(BR)R
V
F
I
R
C
T
Min.
45
-
-
-
Typ.
-
-
-
6
Max.
-
0.45
1
-
Unit
V
V
µA
pF
Note: ESD sensitive product handling required.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
