RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
E
Top View
Marking Code: "E"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current (60 Hz for 1 cyc.)
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
O
I
FSM
T
j
T
s
Value
30
100
1
125
- 40 to + 125
Unit
V
mA
A
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Reverse Current
at V
R
= 10 V
Symbol
V
F
I
R
Max.
0.35
10
Unit
V
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
