RB521S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low current rectification and high speed
switching applications
PINNING
Features
• Extremely small surface mounting type
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
C
Top View
Marking Code: "C"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60Hz for Cyc.)
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
O
I
FSM
T
j
T
s
Value
30
200
1
125
- 40 to + 125
Unit
V
mA
A
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 200 mA
Reverse Current
at V
R
= 10 V
Symbol
V
F
I
R
Max.
0.5
30
Unit
V
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
