RB751S-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for high speed switching and detection applications
Features
• Small surface mounting type
• Low reverse current and low forward voltage
• High reliability
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
D
Top View
Marking Code: "D"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz, 1 Cycle)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
s
Value
40
30
30
200
125
- 40 to + 125
Unit
V
V
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
Reverse Current
at V
R
= 30 V
Capacitance Between Terminals
at V
R
= 1 V, f = 1 MHz
Symbol
V
F
I
R
C
T
Typ.
-
-
2
Max.
0.37
0.5
-
Unit
V
µA
pF
Note: ESD sensitive product handling required.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
