SDB310Q
SCHOTTKY BARRIER DIODE
Features
• Low power rectified
• Silicon epitaxial type
• High reliability
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
G
Top View
Marking Code: "G"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
I
FRM
I
FSM
P
D
T
j
T
s
Value
30
0.2
0.5
2
150
150
- 55 to + 150
Unit
V
A
A
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
at I
F
= 30 mA
Reverse Current
at V
R
= 30 V
Total Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
RR
= 1 mA, R
L
= 100
Ω
Symbol
V
F
I
R
C
T
t
rr
Max.
0.4
0.5
1
10
5
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/11/2006