ST 13003
NPN Silicon Epitaxial Planar Transistor
for power switching and electron rectifier
applications.
The transistor is subdivided into one group
according to its DC current gain.
TO-220 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
s
Value
600
400
9
1.5
1.5
150
-55 to +150
Unit
V
V
V
A
W
O
C
C
O
Characteristics at T
amb
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 10 V, I
C
= 100 mA
Collector Base Breakdown Voltage
at I
C
= 1 mA
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
Emitter Base Breakdown Voltage
at I
E
= 1 mA
Collector Cutoff Current
at V
CB
= 600 V
Emitter Cutoff Current
at V
EB
= 9 V
Collector Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 250 mA
Base Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 250 mA
Symbol
h
FE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
10
600
400
9
-
-
-
-
Max.
70
-
-
-
100
100
1
1.2
Unit
-
V
V
V
nA
µA
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
