SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 271, REV. A
2N7225
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE.
(add suffix S for up-screening to JTX Level – 2N7225S)
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T
A
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
θJC
P
D
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±20
27.4
17
110
150
0.83
150
UNITS
Volts
Amps
Amps
°C
°C/W
Watts
V
GS
=10V, T
C
= 25°C
V
GS
=10V, T
C
= 100°C
PULSED DRAIN CURRENT
@ T
C
= 25°C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25°C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 17A
V
GS
= 10V, I
D
= 27.4A
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
=
250μA
FORWARD TRANSCONDUCTANCE
V
DS
≥
15V, I
DS
= 17A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8xMax. Rating, V
GS
= 0V
V
DS
= 0.8xMax. Rating
V
GS
= 0V, T
J
= 125°C
GATE TO SOURCE LEAKAGE FORWARD @ RATED
GATE TO SOURCE LEAKAGE REVERSE
V
GS
TOTAL GATE CHARGE
V
GS
= 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED
V
DS
GATE TO DRAIN CHARGE
RATED I
D
TURN ON DELAY TIME
V
DD
= 100V
RISE TIME
RATED I
D
TURN OFF DELAY TIME
R
G
= 2.35Ω
FALL TIME
DIODE FORWARD VOLTAGE
T
J
= 25°C, I
S
=
27.4A,
V
GS
= 0V
DIODE REVERSE RECOVERY TIME
T
J
= 25°C
REVERSE RECOVERY CHARGE
I
f
= RATED ID
di/dt =
100A/sec
INPUT CAPACITANCE
V
GS
= 0 VOLTS
OUTPUT CAPACITANCE
V
DS
= 25 VOLTS
BV
DSS
200
-
R
DS(ON)
V
GS(th)
g
fs
2.0
9.0
-
I
DSS
-
-
-
25
250
-
55
8.0
30
-
-
-
100
-100
115
22
60
35
190
170
130
1.9
nA
nC
-
-
0.100
0.105
4.0
-
-
Volts
Ω
Volts
S(1/Ω)
μA
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(ON)
t
f
V
SD
-
nsec
-
-
Volts
t
rr
Q
rr
-
-
950
9.0
nsec
μC
C
iss
C
oss
-
3500
700
-
pF
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