SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 161, REV -
(see also data sheet 766)
2N7224
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
100 Volt, 0.07 Ohm MOSFET
Isolated and Hermetically Sealed
Simple Drive Requirements
Repetitive Avalanche Rating
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T
A
= 25C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
JC
P
D
¡
V
GS
=10V, T
C
= 25C
V
GS
=10V, T
C
= 100C
PULSED DRAIN CURRENT
@ T
C
= 25C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25C
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
20
34
21
136
150
0.83
150
UNITS
Volts
Amps
Amps
C
C/W
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 21A
V
GS
= 10V, I
D
= 34A
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
= 250mA
FORWARD TRANSCONDUCTANCE
V
DS
15V, I
DS
= 21A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8xMax. Rating, V
GS
= 0V
V
DS
= 0.8xMax. Rating
V
GS
= 0V, T
J
= 125C
GATE TO SOURCE LEAKAGE FORWARD
@ RATED
GATE TO SOURCE LEAKAGE REVERSE
V
GS
TOTAL GATE CHARGE
V
GS
= 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED V
DS
GATE TO DRAIN CHARGE
RATED I
D
TURN ON DELAY TIME
V
DD
= 50V
RISE TIME
RATED I
D
TURN OFF DELAY TIME
R
G
= 2.35W
FALL TIME
DIODE FORWARD VOLTAGE
T
J
= 25C, I
S
= 34A,
V
GS
= 0V
DIODE REVERSE RECOVERY TIME
T
J
= 25C
REVERSE RECOVERY CHARGE
I
f
= RATED ID
di/dt = 100A/sec
INPUT CAPACITANCE
V
GS
= 0 VOLTS
OUTPUT CAPACITANCE
V
DS
= 25 VOLTS
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(ON)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
100
-
2.0
9.0
-
-
-
-
-
-
-
0.07
0.081
4.0
-
25
250
100
-100
125
22
65
35
190
170
130
1.8
500
2.9
-
Volts
W
Volts
S(1/W)
mA
-
50
8
15
-
-
-
-
nA
nC
nsec
-
-
-
-
-
3700
1100
200
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
SENSITRON [ SENSITRON ]
