SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4861, Rev.-
MURC1510-MURC1560
MURC1510-MURC1560
Ultrafast Silicon Die
Applications:
•
Switching Power Supply
•
General Purpose
•
Free-Wheeling Diodes
•
Polarity Protection
Diode
Features:
•
•
•
•
•
•
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Symbol
V
RWM
I
F(AV)
I
FRM
I
FSM
MURC
1510
100
MURC
1515
150
MURC
1520
200
MURC
1540
400
MURC
1560
600
15 @ T
C
=
145°C
30 @ T
C
=
145°C
150
Unit
V
A
A
A
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Rectified Forward
Current(Rated V
R
)
Peak Rectified Forward
Current(Rated V
R
, Square Wave, 20
kHz)
Max. Peak One Cycle Non-Repetitive
Surge Current
8.3 ms, half Sine pulse
Operating JunctionTemperature and
Storage Temperature
15 @ T
C
= 150°C
30 @ T
C
= 150°C
200
T
J,
T
stg
-65 to +175
°C
Electrical Characteristics:
Characteristics
Symbol
MURC
1510
MURC
1515
MURC
1520
MURC
1540
MURC
1560
Unit
Max. Instantaneous Forward Voltage
(Note1)
(I
F
= 15 Amp, T
J
= 150
°C)
(I
F
= 15 Amp, T
J
= 25
°C)
Max. Instantaneous Reverse Current
(Note1)
(Rated DC Voltage, T
C
= 150
°C)
(Rated DC Voltage, T
C
= 25
°C)
Max. Junction Capacitance
@V
R
= 5V, T
C
= 25
°C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Max Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/µs)
(I
F
= 0.5 Amp, I
R
= 1.0 A, I
REC
=0.25A)
1.
V
F
0.85
1.05
I
R
500
10
C
T
t
rr
240
500
10
1000
10
1.12
1.25
1.20
1.50
V
µA
pF
nS
35
25
60
50
Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2%
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON [ SENSITRON ]
