Advanced Technical Information
MWI 50-12 E6K
I
C25
= 51 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.4 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
14
13
NTC
18
17
22
21
11, 12
15, 16
19, 20
8
7
6
5
9, 24
4
3
2
1
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 39
Ω;
T
VJ
= 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 39
Ω;
T
VJ
= 125°C
SCSOA; non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
51
36
70
V
CES
10
210
µs
W
V
V
A
A
A
Features
• NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.4
2.8
4.5
1.2
200
90
50
440
50
5.4
2.6
2000
150
0.2
2.9
6.5
0.3
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.6 K/W
K/W
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thCH
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±15 V; R
G
= 39
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 35 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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