SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 893, REV. -
SHD219403
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
200 Volt, 0.21 Ohm, 14A MOSFET
Ceramic Hermetic Package
Fast Switching
Low R
DS (on)
Electrically Equivalent to IRFY240
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250
mA
DRAIN TO SOURCE ON-STATE VOLTAGE
V
GS
= 10V, I
D
= 10A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 10A
V
GS
= 10V, I
D
= 10A, T
C
= 125C
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
= 250mA
FORWARD TRANSCONDUCTANCE
V
DS
2V
DS(on)
, I
D
= 10A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8xMax. Rating, V
GS
= 0V
V
DS
= 0.8xMax. Rating, V
GS
= 0V, T
C
= 125C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DD
= 100V,
RISE TIME
I
D
=14A,
TURN OFF DELAY TIME
R
G
= 5.0W,
FALL TIME
V
GS
= 10V
DIODE FORWARD VOLTAGE
T
C
= 25C, I
S
= 14A,
V
GS
= 0V
REVERSE RECOVERY TIME
I
f
= I
S
,
di
F
/ds = 100A/msec,
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
BV
DSS
V
DS(ON)
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
C
iss
C
oss
C
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RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT V
DS
2V
DS(on),
V
GS
= 10V
PULSED DRAIN CURRENT
@ T
C
= 25C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25C
ALL RATINGS ARE AT T
C
= 25C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D (on)
I
DM
T
OP
/T
STG
R
JC
P
D
MIN.
-
-
-
-55
-
-
200
-
-
2.0
6.0
-
-
-
TYP.
-
-
-
-
-
-
-
1.8
-
-
-
0.1
0.2
-
17
52
36
30
-
500
1300
400
130
MAX.
20
14
56
+150
0.72
175
-
2.1
0.21
0.40
4.0
-
0.25
1.0
100
-100
-
UNITS
Volts
Amps
Amps
C
C/W
Watts
Volts
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
-
-
-
1.5
-
-
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