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SHD219410 参数 Datasheet PDF下载

SHD219410图片预览
型号: SHD219410
PDF下载: 下载PDF文件 查看货源
内容描述: 密封功率MOSFET P- CHANNEL [HERMETIC POWER MOSFET P-CHANNEL]
分类和应用: 晶体晶体管功率场效应晶体管脉冲
文件页数/大小: 3 页 / 67 K
品牌: SENSITRON [ SENSITRON ]
 浏览型号SHD219410的Datasheet PDF文件第2页浏览型号SHD219410的Datasheet PDF文件第3页  
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4001, REV -
SHD219410
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
œ
-200 Volt, 0.5 Ohm, -11A MOSFET
œ
Electrically Isolated Hermetically Sealed
œ
Low R
DS (on)
œ
Equivalent to IRF9240 Series
ALL RATINGS ARE AT T
A
= 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
JC
P
D
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
C
DC
 
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
V
GS
=10V, T
C
= 25•C
V
GS
=10V, T
C
= 100•C
PULSED DRAIN CURRENT
@ T
C
= 25•C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25•C
MIN.
-
-
-
-55
-
-
-200
-
-2.0
4.0
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
–20
-11
-7
-44
+150
0.78
74
-
0.50
0.58
-4.0
-
UNITS
Volts
Amps
Amps
•C
•C/W
Watts
Volts
W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= -10V, I
D
= -7A
V
GS
= -10V, I
D
= -11A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250mA
FORWARD TRANSCONDUCTANCE
V
DS
˜
-15V, I
DS
= -7A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8x Max. Rating, V
GS
= 0V
V
DS
= 0.8x Max. Rating
V
GS
= 0V, T
J
= 125•C
GATE TO SOURCE LEAKAGE FORWARD V
GS
= -20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= 20V
TOTAL GATE CHARGE
V
GS
= -10V
GATE TO SOURCE CHARGE
V
DS
= Max. Ratingx0.5
GATE TO DRAIN CHARGE
I
D
= -11A
TURN ON DELAY TIME
V
DD
= -100V,
RISE TIME
I
D
=-11A,
TURN OFF DELAY TIME
R
G
= 9.1W
FALL TIME
DIODE FORWARD VOLTAGE
T
J
= 25•C, I
S
= -11A,
V
GS
= 0V
DIODE REVERSE RECOVERY TIME
T
J
= 25•C,
REVERSE RECOVERY CHARGE
I
F
= -11A,
di/dt = -100A/msec,
V
DD
ˆ
-50V
INPUT CAPACITANCE
V
GS
= 0 V,
OUTPUT CAPACITANCE
V
DS
= 25 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
DRAIN TO CASE CAPACITANCE
Volts
S(1/W)
mA
-25
-250
-100
100
60
15
38
35
85
85
65
-4.6
440
3.6
-
-
28
3.0
4.5
-
-
-
-
nA
nC
nsec
-
-
-
-
Volts
nsec
mC
pF
-
1200
570
81
12
œ
221 WEST INDUSTRY COURT
œ
DEER PARK, NY 11729-4681
œ
PHONE (631) 586-7600
œ
FAX (631) 242-9798
œ
œ
World Wide Web Site - http://www.sensitron.com
œ
E-mail Address - sales@sensitron.com
œ