SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 607, REV A
SHD219504
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
400 Volt, 0.3 Ohm, 9.0A MOSFET
•
Low R
DS (on)
•
Equivalent to IRF350 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
D
T
OP
/T
STG
P
D
R
thJC
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±20
14
9.0
+150
347
0.36
UNITS
Volts
Amps
Amps
°C
Watts
°C/W
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
@ T
C
= 25°C
ON-STATE DRAIN CURRENT
@ T
C
= 100°C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ T
C
= 25°C
THERMAL RESISTANCE, JUNCTION TO CASE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 9.0A
V
GS
= 10V, I
D
= 14A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= 0.25mA
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= Max. Rating, V
GS
= 0V
V
DS
= 0.8xMax. Rating, V
GS
= 0V, T
J
= 125°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DD
= 200V,
RISE TIME
I
D
= 14A,
TURN OFF DELAY TIME
R
G
= 2.2Ω
FALL TIME
TOTAL GATE CHARGE
I
D
= 14A,
GATE TO SOURCE CHARGE
V
GS
= 10V,
GATE TO DRAIN CHARGE
V
DS
=0.5xMax. Rating
DIODE FORWARD VOLTAGE
T
C
= 25°C, I
S
= 14A,
V
GS
= 0V
REVERSE RECOVERY CHARGE
T
J
= 25°C,
di/dt = 100A/μsec, V
DD
= 50V
REVERSE RECOVERY TIME
T
J
= 25°C,
I
F
= 14A,
di/dt = 100A/μsec, V
DD
= 50V
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
SYMBOL
BV
DSS
MIN.
400
TYP.
-
-
-
-
-
MAX.
-
0.3
0.4
4.0
250
1000
100
-100
35
190
170
130
110
18
65
1.7
11
1200
-
C
iss
C
oss
C
rss
-
2600
680
250
nsec
UNITS
Volts
Ω
R
DS(ON)
V
GS(th)
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
V
SD
Q
RR
t
rr
-
2.0
-
-
Volts
μA
nA
-
52
5.0
25
-
-
-
-
-
-
-
-
nsec
nC
nC
nC
Volts
μC
-
-
pF
© 2001 Sensitron Semiconductor
•
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•
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•
PHONE (631) 586-7600
•
FAX (631) 242-9798
•
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•
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•
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