SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4139, REV -
SHD220213
HERMETIC POWER MOSFET
N-CHANNEL LOGIC LEVEL
FEATURES:
55 Volt, 0.06 Ohm MOSFET
Hermetically Sealed
Add a “C” to the part number for ceramic seals (SHDC220213)
Surface Mount Package
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250
mA
DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 11A
V
GS
= 5V, I
D
= 11A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= 250mA
FORWARD TRANSCONDUCTANCE
V
DS
= 25V, I
D
= 11A
ZERO GATE VOLTAGE DRAIN CURRENT, T
J
= 25C
(V
DS
= 55V, V
GS
= 0V), T
J
= 125C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 16V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -16V
TOTAL GATE CHARGE
V
GS
= 5V,
GATE TO SOURCE CHARGE
V
DS
= 44V,
GATE TO DRAIN CHARGE
I
D
= 11A
TURN ON DELAY TIME
V
DD
= 28V,
RISE TIME
I
D
= 11A,
TURN OFF DELAY TIME
R
G
= 12W,
FALL TIME
V
GS
= 5V
DIODE FORWARD VOLTAGE
T
J
= 25C,I
S
= 11A
V
GS
= 0V
REVERSE RECOVERY TIME
T
J
= 25C,
I
S
= 11A,
di/dt
100A/msec,
REVERSE RECOVERY CHARGE
V
DD
25V
INPUT CAPACITANCE
V
GS
= 0V, V
DS
= 25V,
OUTPUT CAPACITANCE
f = 1.0MHz
REVERSE TRANSFER CAPACITANCE
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
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RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT V
GS
= 10V, T
C
= 25C
V
GS
= 10V, T
C
= 100C
PULSED DRAIN CURRENT
@ T
C
= 25C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25C
ALL RATINGS ARE AT T
A
= 25C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
JC
P
D
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
16
17
11
68
+175
3.5
35
UNITS
Volts
Amps
Amps
C
C/W
Watts
55
-
1.0
6.5
-
-
-
-
-
-
-
-
-
-
-
-
-
0.060
0.075
2.0
-
25
250
100
-100
15
3.7
8.5
11
133
35
66
1.3
90
200
-
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
-
-
-
-
-
520
140
50
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