SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4324, REV. -
SHD220721
LOW R
DS
HERMETIC POWER MOSFET - P-CHANNEL
FEATURES:
•
150 Volt, 0.1 Ohm, 7A MOSFET
•
Isolated Hermetic Metal Package
•
Ultra Low R
DS (on)
•
Characterized at V
GS
of 6V
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
ALL RATINGS ARE AT T
C
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D25
I
DM
T
J
/T
STG
P
D
R
θJC
SYMBOL
BV
DSS
-
V
GS(th)
g
fs
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Q
g
Q
gs
Q
gd
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±20
-7
- 50
+150
40
3.1
UNITS
Volts
Amps
Amps
°C
Watts
°C/W
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
nA
nsec
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= - 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= - 10V, I
D
= - 7A
V
GS
= - 6V, I
D
= - 5A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= - 250µA
FORWARD TRANSCONDUCTANCE
V
DS
= - 15V, I
D
= - 7A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25°C
T
J
= 125°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DD
= - 75V
RISE TIME
I
D
= - 5A
TURN OFF DELAY TIME
V
GS
= - 10V
FALL TIME
R
G
= 6Ω
DIODE FORWARD VOLTAGE
I
F
= - 5A, V
GS
= 0V
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
REVERSE RECOVERY TIME
T
J
= 25°C,
I
F
= - 3A, V
R
= 100V
di/dt = 100A/µsec
TOTAL GATE CHARGE
V
DD
= - 75V
GATE SOURCE CHARGE
I
D
= - 5A
GATE DRAIN CHARGE
V
GS
= - 10V
MIN.
-150
-
-
-2
-
-
-
-
TYP.
-
0.09
0.10
-
19
-
-
25
46
115
64
0.9
100
88
18
27
MAX.
-
0.10
0.11
-4
-
-1
- 50
100
-100
40
70
180
100
1.2
150
-
nC
-
-
-
Volts
nsec
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
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