SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 222, REV. B
Formerly Part Number SHD22632
SHD226302
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
100 Volt, .19 Ohm, 11A MOSFET
•
Isolated Hermetic Metal Package
•
Fast Switching
•
Low R
DS (on)
•
Equivalent to IRFY130M
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
J
/T
STG
P
D
MIN.
-
-
-
-55
-
TYP.
-
-
-
-
-
MAX.
±20
11
44
+150
45
UNITS
Volts
Amps
Amps
°C
Watts
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 7.0A
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
=
250μA
FORWARD TRANSCONDUCTANCE
V
DS
≥
15V, I
D
= 7.0A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V
T
J
= 25°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
=
20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DD
= 50V,
RISE TIME
I
D
= 11A
TURN OFF DELAY TIME
R
G
= 7.5Ω
FALL TIME
DIODE FORWARD VOLTAGE
I
S
= 14A, V
GS
= 0V
Pulse test, t
≤
300
μs,
duty cycle d
≤
2
%
REVERSE RECOVERY TIME
T
J
= 25°C,
V
DD
≤
50V
di/dt = 100A/μsec
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
BV
DSS
100
-
R
DS(ON)
V
GS(th)
2.0
-
-
-
-
.19
4.0
Ω
Volts
S(1/Ω)
g
fs
I
DSS
I
GSS
3.0
-
-
-
-
-
-
25
250
100
-100
30
75
40
45
1.5
μA
nA
Volts
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
-
-
nsec
-
1.0
Volts
t
rr
C
iss
C
oss
C
rss
R
thJC
-
-
-
650
240
44
-
300
-
nsec
pF
2.8
°C/W
-
•221
WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798•
•
World Wide Web Site - www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
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