SHD226707
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4307, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
•
100 Volt, 0.035 Ohm MOSFET
•
Hermetically Sealed
•
TO-257 Hermetic Package
MAXIMUM RATINGS
ALL RATINGS ARE AT T
A
= 25°C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
θJC
P
D
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±20
30
18
55
+175
1.4
107
UNITS
Volts
Amps
Amps
°C
°C/W
Watts
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT V
GS
= 10V, T
C
= 25°C
V
GS
= 10V, T
C
= 100°C
PULSED DRAIN CURRENT
@ T
C
= 25°C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25°C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250
µA
DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 30A
V
GS
= 10V, I
D
= 18A T
A
=125
o
C
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= 250µA
FORWARD TRANSCONDUCTANCE
V
DS
= 15V, I
D
= 30A
ZERO GATE VOLTAGE DRAIN CURRENT, T
J
= 25°C
(V
DS
= 100V, V
GS
= 0V), T
J
= 125°C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TOTAL GATE CHARGE
V
GS
= 10V,
GATE TO SOURCE CHARGE
V
DS
= 50V,
GATE TO DRAIN CHARGE
I
D
= 30A
TURN ON DELAY TIME
V
DD
= 50V,
RISE TIME
I
D
= 30A,
TURN OFF DELAY TIME
R
G
= 2.5Ω,
FALL TIME
V
GS
= 10V
DIODE FORWARD VOLTAGE
T
J
= 25°C,I
S
= 30A
V
GS
= 0V
REVERSE RECOVERY TIME
T
J
= 25°C,
I
S
= 30A,
di/dt
≤
100A/µsec
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
100
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
23
-
-
29
10
11
-
-
0.049
0.080
4.0
-
10
100
100
-100
-
-
-
26
20
54
40
1.35
80
Volts
Ω
Volts
S(1/Ω)
µA
nA
nC
nsec
Volts
nsec
-
-
-
-
•
221 WEST INDUSTRY COURT
•
DEER PARK, NY 11729-4681
•
PHONE (631) 586-7600
•
FAX (631) 242-9798
•
•
World Wide Web - http://www.sensitron.com
•
E-mail Address - sales@sensitron.com
•
SENSITRON [ SENSITRON ]
