SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 473, REV. -
SHD225602
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
100 Volt, 75A, 0.025 Ohm, MOSFET
Isolated Hermetic Metal Package
Fast intrinsic Rectifier
Low R
DS (on)
Low package inductance-easy to drive and protect
Similar Part Type - IXTD75N10
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT @ T
C
= 25C
PULSED DRAIN CURRENT @ T
C
= 25C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T
C
= 25C
SYMBOL
V
GS
I
D (on)
I
DM
T
OP
/T
STG
R
thJC
P
D
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
C
iss
C
oss
C
rss
MIN.
-
-
-
-55
-
-
100
-
2.0
25
-
-
-
¡
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25 C UNLESS OTHERWISE SPECIFIED.
TYP.
-
-
-
-
-
-
-
-
-
30
-
-
-
20
60
80
60
-
-
4500
1600
800
MAX.
20
75
300
+150
0.32
390
-
0.025
4.0
-
250
1.0
100
-100
30
110
110
90
1.75
200
-
UNITS
Volts
Amps
Amps
C
C/W
Watts
Volts
W
Volts
S(1/W)
mA
mA
nA
nsec
Volts
nsec
pF
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250
mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 37.5A
GATE THRESHOLD VOLTAGE
V
DS
= V
GS
, I
D
= 4mA
FORWARD TRANSCONDUCTANCE
V
DS
10V, I
D
= 75A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8xMax. Rating, V
GS
= 0V
V
DS
= 0.8xMax. Rating, V
GS
= 0V, T
C
= 125C
GATE TO SOURCE LEAKAGE FORWARD
V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE
V
GS
= -20V
TURN ON DELAY TIME
V
DS
= 0.5V,
RISE TIME
I
D
= 37.5A,
TURN OFF DELAY TIME
R
G
= 2.0W,
FALL TIME
V
GS
= 10V
DIODE FORWARD VOLTAGE
T
C
= 25C, I
S
= 75A,
V
GS
= 0V
REVERSE RECOVERY TIME
T
J
= 25C
I
f
= 25A, di/dt = 100A/msec, V
r
= 25V
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
-
-
-
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