SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
Datasheet 5024, Preliminary
SPM4012006
Dual MOSFET BRIDGE, With Gate Driver
DESCRIPTION: A 60 VOLT, 12 AMP, DUAL MOSFET BRIDGE
A high density Dual H-Bridge capabable of driving 12A peak at 60V. This small
footprint dual bridge contains low Rdson power FETs , FET drivers and precision
current sense reistors. The device does not need heat sinking and is housed in an
encapsulated sealed enclosure. The drive input signals are TTL compatable.
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
PARAMETER
MOSFET SPECIFICATIONS (Per Device)
Drain-to-Source Breakdown Voltage
BV
DSS
60
-
-
V
Continuos Drain Current
T
C
= 25
O
C
T
C
= 100 C
O
I
D
-
-
12
8.7
A
Pulsed Drain Current, Pulse Width limited to 1 msec
Zero Gate Voltage Drain Current
V
DS
= 60V, V
GS
=0V T
i
=25 C
V
DS
= 60 V, V
GS
=0V T
i
=125 C
Static Drain-to-Source On Resistance,
I
D
= 7.5A, V
GS
= 10V,
Maximum Thermal Resistance
T
j
= 25
O
C
T
j
= 150 C
O
o
o
I
DM
I
CSS
-
-
-
-
97
A
20
250
R
DSon
-
7.4
14.8
R
θJC
T
jmax
T
jmax
tr
tf
-
-
9.4
18.8
35
o
uA
uA
mΩ
C/W
o
Maximum operating Junction Temperature
-40
-
150
C
Maximum Storage Junction Temperature
Rise Time
Fall Time
-55
-
20
20
150
o
C
ns
ns
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Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798
•
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World Wide Web Site - http://www.sensitron.com
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E-mail Address - sales@sensitron.com
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