Amber Power LED
2. Electro-Optical Characteristics (at IF=1.4A, TA=25ºC)
Value
Typ
Parameter
Symbol
Unit
Min
Max
[2]
[1]
ФV
Luminous Flux
118.5
585
144
590
2.5
40
-
lm
nm
[3]
Dominant Wavelength
595
3.0
λD
VF
[4]
Forward Voltage
2.0
V
2Θ 1/2
RθJ-B
View Angle
deg.
ºC /W
[5]
Thermal Resistance
6
3. Absolute Maximum Ratings (at TA=25ºC)
Parameter
Symbol
Value
Unit
Forward Current
Power Dissipation
Junction Temperature
IF
PD
Tj
1.6
4.8
A
W
ºC
100
Operating Temperature
Storage Temperature
Topr
-30 ~ +85
ºC
Tstg
-
-40 ~ +120
ºC
-
[6]
ESD Sensitivity
±20,000V HBM
*Notes :
[1] SSC maintains a tolerance of ±10% on flux and power measurements.
[2] ФV is the total luminous flux output as measured with an integrated sphere.
[3] Dominant wavelength is derived from the CIE 1931 Chromaticity diagram.
A tolerance of ±0.5nm for dominant wavelength
[4] A tolerance of ±0.06V on forward voltage measurements
[5] RθJ-B is measured with a SSC metal core pcb.(25 ºC ≤TJ ≤ 110 ºC)
Break voltage of Metal PCB is 6.5kVAC
[6] It is included the zener chip to protect the product from ESD.
--------------------------Caution--------------------------
Please do not drive at rated current more than 5 sec. without proper heat sink
SEOUL SEMICONDUCTOR CO., LTD.
148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea
TEL : 82-2-3281-6269 FAX : 82-2-857-5430
Rev05 – 2005/09
11
SEOUL [ Seoul Semiconductor ]
