8. Amber (A11191, A11192)
8-1 Electro-Optical characteristics at IF=350mA, TA=25ºC
Value
Typ
Parameter
Symbol
Unit
Min
Max
[2]
Luminous Flux [1]
Dominant Wavelength [3]
Forward Voltage [4]
View Angle
Thermal Resistance [5]
Thermal Resistance [6]
ФV
24.5
585
2.0
38
590
2.5
65
-
lm
nm
λD
595
3.0
VF
V
2Θ 1/2
RθJ-B
RθJ-C
deg.
ºC /W
ºC /W
12
10.5
8-2 Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Forward Current
Power Dissipation
Junction Temperature
IF
PD
Tj
0.4
1.2
A
W
ºC
100
Operating Temperature
Topr
-40 ~ +85
ºC
Storage Temperature
ESD Sensitivity [7]
Tstg
-
-40 ~ +120
ºC
-
±20,000V HBM
*Notes :
[1] SSC maintains a tolerance of ±10% on flux and power measurements.
[2] ФV is the total luminous flux output as measured with an integrated sphere.
[3] Dominant wavelength is derived from the CIE 1931 Chromaticity diagram.
A tolerance of ±0.5nm for dominant wavelength
[4] A tolerance of ±0.06V on forward voltage measurements
[5], [6] RθJ-B is measured with a SSC metal core pcb.(25 ºC ≤TJ ≤ 110 ºC)
RθJ-C is measured with only emitter. .(25 ºC ≤TJ ≤ 110 ºC)
Break voltage of Metal PCB is 6.5kVAC
[7] It is included the zener chip to protect the product from ESD.
--------------------------Caution--------------------------
Please do not drive at rated current more than 5 sec. without proper heat sink
12
Rev 09 – 2007 / 08
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SEOUL [ Seoul Semiconductor ]
